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English

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Preparation of Ag2O/PSi/c-Si Heterojunction Device Using Rapid Thermal Oxidation Method for Gas Sensor Application

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Preparation of Ag2O/PSi/c-Si Heterojunction Device Using Rapid Thermal Oxidation Method for Gas Sensor Application
2015

Elixir International Journal Nanotechnology Vol. 81, 13-4-2015

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Switching surface design via linear matrix inequality and Ackermannâ€™s formula for a linearized inverted pendulum system
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11 January 2022
Determinants of Factors Impacting Buying Intention towards E- Retailing: A Special Reference to Jordan Context
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2022
Preparation of the scattering Layer based on Ti Nanotube and their sensitized Solar Cell Applications
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2017
Improving the Photoresponse of porous Silicon for Solar Cell Applications by Embedding of CdTe Nanoparticles
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The effect of Ga-doped Cdseproperties prepared by thermal evaporation.
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2017

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